PhD, Serhii Novytskyi, was born in 1988 in Ukraine. Serhii Novytskyi received a diploma from the V.E. Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine, in 2014. The topic of his thesis was “Cathode contacts with TiBx diffusion barriers for indium phosphide Gunn diodes”. In the period from 2005 to 2010, he received the degree MSc from the Faculty of Physics and Mathematics at Zhytomyr Ivan Franko State University, Zhytomyr, Ukraine. From 2014 to 2018, he was a senior lecturer at Zhytomyr Ivan Franko State University, Faculty of Physics.

In 2022, he joined the CENTERA project at the Institute of High-Pressure Physics of the Polish Academy of Sciences in Warsaw, Poland. The field of scientific interest is solid-state electronics, the physics of semiconductor devices, elements, and systems.