MSc Pavlo Sai obtained master degree in Physics from Faculty of Physics and mathematics at Zhytomyr Ivan Franko State University in 2015. He has three years’ experience as engineer in laboratory of physical and technological problems of solid-state microwave electronics at V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine. His work was connected to the low-temperature characterization of electronic properties of (In,Ga,Al)N-based semiconductor epitaxial films, current flow mechanisms investigation through metal-semiconductor interface and its correlation with rapid thermal annealing and different types of metallization.
Currently he is a PhD student in THz laboratory at Institute of High Pressure Physics of the Polish Academy of Sciences. He studies innovative semiconductor structures containing lateral Schottky contact to two-dimensional electron gas in AlGaN/GaN heterostructures: basic properties and high frequency (terahertz) applications.
Since 2018, he joined CENTERA Project as an assistant. His major scientific tasks are laser lithography in the processing of AlGaN/GaN high electron mobility transistors and grating-gate structures of large area; DC and AC characterization of fabricated structures; low-frequency noise measurements; THz photoresponse measurements. Special task is Graphene transferring by the high-speed electrochemical delamination from Cu foil onto AlGaN surface.
His main scientific interests are: GaN-based plasmonic devices for terahertz spectral range application; Grating metamaterials for amplification and generation of terahertz radiation; AlGaN/GaN high electron mobility transistors with Graphene integration; ohmic and barrier contact to III-Nitride group of semiconductor materials.