PhD Piotr A. Dróżdż was born in 1990 in Poland. He graduated with PhD diploma from University of Warsaw in 2019. At the same year, he joined WG4 group of prof. Dmitry Liobchenko at CENTERA. Experience in physics and fabrication of semiconductor nanostructures based on gallium nitride as well as will to explore the borderland between science and technology, resulted in present scientific interests of dr Dróżdż which are concentrated on applying III – nitride technology to fabricate active elements for THz applications.